Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well

Authors

K. M. Hung, National Kaohsiung University of Applied SciencesFollow
J.-Y. Kuo, National Kaohsiung University of Applied Sciences
C. C. Hong, National Taiwan University
Greg Sun, University of Massachusetts BostonFollow
R. A. Soref, Air Force Research Laboratory, Hanscom Air Force BaseFollow

Document Type

Article

Publication Date

5-24-2010

Abstract

We report analysis of the carrier distribution during terahertz emission process with carrier–phonon interaction based on p-doped strained SiGe/Si single quantum-well. The results of this analysis show that a considerable number of carriers can penetrate the phonon wall to become “hot” carriers on an approximately picosecond timescale. These hot carriers relax after the removal of the applied voltage, generating a “second” emission in the measurement. This investigation provides an understanding of the carrier dynamics of terahertz emission and has an implication for the design of semiconductor terahertz emitters.

Comments

The following article appeared in Applied Physics Letters, vol. 96, issue 21 (2010) and may be found at http://dx.doi.org/10.1063/1.3432075.

Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Recommended Citation

Hung, K. M.; Kuo, J.-Y.; Hong, C. C.; Sun, Greg; and Soref, R. A., "Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well" (2010). Physics Faculty Publications. 9.
https://scholarworks.umb.edu/physics_faculty_pubs/9

Publisher

American Institute of Physics

Rights

Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.