Nonlinear all-optical GaN/AlGaN multi-quantum-well devices for 100 Gb/s applications at λ = 1.55 μm

Authors

Greg Sun, University of Massachusetts BostonFollow
Jacob B. Khurgin, Johns Hopkins UniversityFollow
Richard A. Soref, Air Force Research Laboratory, Hanscom Air Force BaseFollow

Document Type

Article

Publication Date

11-10-2005

Abstract

Using quantum-mechanical analysis, a strain-balanced stack of coupled GaN/AlGaNquantum wells has been engineered for bandwidth-optimized all-optical switching at low switching powers. Intersubband transitions between three conduction subbands provide the basis for the large, fast, nonlinear optical response. Optimized performance for a given symbol rate is obtained by engineering the response time and nonlinear phase shift.

Comments

The following article appeared in Applied Physics Letters, vol. 87, issue 20 (2005) and may be found at http://dx.doi.org/10.1063/1.2132084.

Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Recommended Citation

Sun, Greg; Khurgin, Jacob B.; and Soref, Richard A., "Nonlinear all-optical GaN/AlGaN multi-quantum-well devices for 100 Gb/s applications at λ = 1.55 μm" (2005). Physics Faculty Publications. 22.
https://scholarworks.umb.edu/physics_faculty_pubs/22

Publisher

American Institute of Physics

Rights

Copyright 2005 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.