Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Authors

Greg Sun, University of Massachusetts BostonFollow
H. H. Cheng, National Taiwan UniversityFollow
J. Menéndez, Arizona State University at the Tempe Campus
Jacob B. Khurgin, Johns Hopkins UniversityFollow
R. A. Soref, Air Force Research Laboratory, Hanscom Air Force BaseFollow

Document Type

Article

Publication Date

6-20-2007

Abstract

The authors propose a Ge/Ge_0.76Si_0.19Sn_0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a “clean” offset of150 meV situated below other energy valleys (Γ,X). The entire structure is strain-free because the lattice-matched Ge and Ge_0.76Si_0.19Sn_0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.

Comments

The following article appeared in Applied Physics Letters, vol. 90, issue 25 (2007) and may be found at http://dx.doi.org/10.1063/1.2749844.

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Recommended Citation

Sun, Greg; Cheng, H. H.; Menéndez, J.; Khurgin, Jacob B.; and Soref, R. A., "Strain-free Ge/GeSiSn quantum cascade lasers based on L-valley intersubband transitions" (2007). Physics Faculty Publications. 20.
https://scholarworks.umb.edu/physics_faculty_pubs/20

Publisher

American Institute of Physics

Rights

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.