Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures

Authors

K. Y. Wang, National Taiwan UniversityFollow
W. P. Huang, National Taiwan UniversityFollow
H. H. Cheng, National Taiwan UniversityFollow
Greg Sun, University of Massachusetts BostonFollow
R. A. Soref, Air Force Research Laboratory, Hanscom Air Force BaseFollow
R. J. Nicholas, University of Oxford
Y. W. Suen, National Chung Hsing University, Taichung

Document Type

Article

Publication Date

8-17-2007

Abstract

The authors report photoluminescence (PL) measurement on a series of Si/SiGequantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment—desired for electroluminescent devices—can be achieved by strain engineering.

Comments

The following article appeared in Applied Physics Letters, vol. 91, issue 7 (2007) and may be found at http://dx.doi.org/10.1063/1.2771094.

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Recommended Citation

Wang, K. Y.; Huang, W. P.; Cheng, H. H.; Sun, Greg; Soref, R. A.; Nicholas, R. J.; and Suen, Y. W., "Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures" (2007). Physics Faculty Publications. 19.
https://scholarworks.umb.edu/physics_faculty_pubs/19

Publisher

American Institute of Physics

Rights

Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.