Electron tunneling in a strained n-type Si1−xGex/Si/Si1−xGex double-barrier structure

Authors

K. M. Hung, National Kaohsiung University of Applied SciencesFollow
T. H. Cheng, National Taiwan University
W. P. Huang, National Taiwan UniversityFollow
K. Y. Wang, National Taiwan UniversityFollow
H. H. Cheng, National Taiwan UniversityFollow
Greg Sun, University of Massachusetts BostonFollow
R. A. Soref, Air Force Research Laboratory, Hanscom Air Force BaseFollow

Document Type

Article

Publication Date

9-26-2008

Abstract

We report electrical measurements on an n-type Si_1−xGe_x/Si/Si_1−xGe_x double-barrier structure grown on a partially relaxed Si_1−yGe_y buffer layer. Resonance tunneling of Δ₄band electrons is demonstrated. This is attributed to the strain splitting in the SiGe buffer layer where the Δ₄ band is lowest in energy at the electrode. Since the Δ₄ band electrons have a much lighter effective mass along the direction of tunneling current in comparison with that of the Δ₂ band electrons, this work presents an advantage over those SiGe resonant-tunneling diodes in which tunneling of Δ₂ band electrons is employed.

Comments

The following article appeared in Applied Physics Letters, vol. 93, issue 12 (2008) and may be found at http://dx.doi.org/10.1063/1.2991295.

Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Recommended Citation

Hung, K. M.; Cheng, T. H.; Huang, W. P.; Wang, K. Y.; Cheng, H. H.; Sun, Greg; and Soref, R. A., "Electron tunneling in a strained n-type Si1−xGex/Si/Si1−xGex double-barrier structure" (2008). Physics Faculty Publications. 17.
https://scholarworks.umb.edu/physics_faculty_pubs/17

Publisher

American Institute of Physics

Rights

Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.