The authors report photoluminescence (PL) measurement on a series of Si/SiGequantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment—desired for electroluminescent devices—can be achieved by strain engineering.
Wang, K. Y.; Huang, W. P.; Cheng, H. H.; Sun, Greg; Soref, R. A.; Nicholas, R. J.; and Suen, Y. W., "Observation of type-I and type-II excitons in strained Si/SiGe quantum-well structures" (2007). Physics Faculty Publications. 19.
American Institute of Physics
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