Document Type
Article
Publication Date
3-16-2010
Abstract
Semiconductor optical emitters radiate light via band-to-band optical transitions. Here, a different mechanism of radiation emission, which is not related to the energy band of the materials, is proposed. In the case of carriers traveling along a sinusoidal trajectory through a wrinkled nanostructure, radiation was emitted via changes in their velocity in a manner analogous to synchrotron radiation. The radiated frequency of wrinkled SiGe/SiGe nanostructure was found to cover a wide spectrum with radiation power levels of the order of submilliwatts. Thus, this nanostructure can be used as a Si-based optical emitter and it will enable the integration of optoelectronic devices on a wafer.
Recommended Citation
Fedorchenko, A. I.; Cheng, H. H.; Sun, Greg; and Soref, R. A., "Radiation emission from wrinkled SiGe/SiGe nanostructure" (2010). Physics Faculty Publications. 11.
https://scholarworks.umb.edu/physics_faculty_pubs/11
Publisher
American Institute of Physics
Rights
Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Comments
The following article appeared in Applied Physics Letters, vol. 96, issue 11 (2010) and may be found at http://dx.doi.org/10.1063/1.3360881.
Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.