Date of Award

6-1-2014

Document Type

Campus Access Thesis

Degree Name

Master of Science (MS)

Department

Physics, Applied

First Advisor

Walter Buchwald

Second Advisor

Maxim Olshanii

Third Advisor

Greg Sun

Abstract

Quantum dots that can be used as building blocks for on-chip integrated quantum optic circuits have unique requirements that have not been fulfilled by current, state-of-the-art quantum dot fabrication methods. In this thesis, a new class of quantum dots is designed that utilizes a novel combination of Fermi level surface pinning, a highly doped epi-layer cap and a buried inter-sub-band transition to address these critical deficiencies. These designed structures are simulated and the resulting quantum dot properties are obtained. Doped cap dimension, epi-layer thicknesses, dopant concentrations and heterostructure band offsets are varied to find the optimal quantum dot design. These new quantum dots overcome the drawbacks of current quantum dot fabrication methodologies as they are able to be deterministically placed and of a precisely known confining potential. These dots have the potential to find use as a component in large scale integrated quantum optic architecture.

Comments

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