Document Type
Article
Publication Date
6-19-1995
Abstract
The feasibility of population inversion is studied for the SiGe/Si system and compared with that of GaAs/AlGaAs. Because of the absence of strong polar optical phonon scattering in SiGe/Si, the lifetime difference of the upper and lower lasing levels, to which the population inversion and laser gain are proportional, is consistently an order of magnitude larger than that of GaAs/AlGaAs; nor does it show the sudden drop to zero or negative values when the lasing energy exceeds the optical phonon energy. Both systems studied are superlattices, each period of which consists of three coupled quantum wells and barriers.
Recommended Citation
Sun, Greg; Friedman, L.; and Soref, Richard A., "Intersubband lasing lifetimes of SiGe/Si and GaAs/AlGaAs multiple quantum well structures" (1995). Physics Faculty Publications. 32.
https://scholarworks.umb.edu/physics_faculty_pubs/32
Publisher
American Institute of Physics
Rights
Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Comments
The following article appeared in Applied Physics Letters, vol. 66, issue 25 (1995) and may be found at http://dx.doi.org/10.1063/1.113375.
Copyright 1995 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.