Title
Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass
Document Type
Article
Publication Date
11-26-2001
Abstract
Modeling and design studies show that a strain-balanced Si1−xGex/Si superlattice onSi1−yGey-buffered Si can be engineered to give an inverted effective mass HH2 subband adjacent to HH1, thereby enabling a 77 K edge-emitting electrically pumped p–i–pquantum staircase laser for THz emission at energies below the 37 meV Ge–Ge optical phonon energy. Analysis of hole-phonon scattering, lifetimes, matrix elements, and hole populations indicates that a gain of 450 cm−1 will be feasible at f = 7.3 THz during 1.7 kA/cm2 current injection.
Recommended Citation
Soref, Richard A. and Sun, Greg, "Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass" (2001). Physics Faculty Publications. 25.
https://scholarworks.umb.edu/physics_faculty_pubs/25
Publisher
American Institute of Physics
Rights
Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Comments
The following article appeared in Applied Physics Letters, vol. 79, issue 22 (2001) and may be found at http://dx.doi.org/10.1063/1.1421079.
Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.