Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass

Authors

Richard A. Soref, Air Force Research Laboratory, Hanscom Air Force BaseFollow
Greg Sun, University of Massachusetts BostonFollow

Document Type

Article

Publication Date

11-26-2001

Abstract

Modeling and design studies show that a strain-balanced Si_1−xGe_x/Si superlattice onSi_1−yGe_y-buffered Si can be engineered to give an inverted effective mass HH2 subband adjacent to HH1, thereby enabling a 77 K edge-emitting electrically pumped p–i–pquantum staircase laser for THz emission at energies below the 37 meV Ge–Ge optical phonon energy. Analysis of hole-phonon scattering, lifetimes, matrix elements, and hole populations indicates that a gain of 450 cm⁻¹ will be feasible at f = 7.3 THz during 1.7 kA/cm² current injection.

Comments

The following article appeared in Applied Physics Letters, vol. 79, issue 22 (2001) and may be found at http://dx.doi.org/10.1063/1.1421079.

Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Recommended Citation

Soref, Richard A. and Sun, Greg, "Terahertz gain in a SiGe/Si quantum staircase utilizing the heavy-hole inverted effective mass" (2001). Physics Faculty Publications. 25.
https://scholarworks.umb.edu/physics_faculty_pubs/25

Publisher

American Institute of Physics

Rights

Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.