Document Type

Article

Publication Date

4-29-2004

Abstract

We propose the idea of making quantum dot lasers by embedding direct-band gap quantum dots in a short period superlattice whose band gap is indirect. This technique reduces the threshold current and its temperature dependence. We show that a higher characteristic-temperature T0 can be achieved in a quantum dot laser with indirect GaAs/AlAs superlattice barriers compared to that with direct GaAs barriers.

Comments

The following article appeared in Applied Physics Letters, vol. 84, issue 19 (2004) and may be found at http://dx.doi.org/10.1063/1.1751606.

Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Publisher

American Institute of Physics

Rights

Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

Included in

Physics Commons

Share

COinS
 
 

To view the content in your browser, please download Adobe Reader or, alternately,
you may Download the file to your hard drive.

NOTE: The latest versions of Adobe Reader do not support viewing PDF files within Firefox on Mac OS and if you are using a modern (Intel) Mac, there is no official plugin for viewing PDF files within the browser window.