Reduced threshold current of a quantum dot laser in a short period superlattice of indirect-band gap
Document Type
Article
Publication Date
4-29-2004
Abstract
We propose the idea of making quantum dot lasers by embedding direct-band gap quantum dots in a short period superlattice whose band gap is indirect. This technique reduces the threshold current and its temperature dependence. We show that a higher characteristic-temperature T0 can be achieved in a quantum dot laser with indirect GaAs/AlAs superlattice barriers compared to that with direct GaAs barriers.
Recommended Citation
Sun, Greg; Soref, Richard A.; and Khurgin, Jacob B., "Reduced threshold current of a quantum dot laser in a short period superlattice of indirect-band gap" (2004). Physics Faculty Publications. 23.
https://scholarworks.umb.edu/physics_faculty_pubs/23
Publisher
American Institute of Physics
Rights
Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Comments
The following article appeared in Applied Physics Letters, vol. 84, issue 19 (2004) and may be found at http://dx.doi.org/10.1063/1.1751606.
Copyright 2004 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.