We report analysis of the carrier distribution during terahertz emission process with carrier–phonon interaction based on p-doped strained SiGe/Si single quantum-well. The results of this analysis show that a considerable number of carriers can penetrate the phonon wall to become “hot” carriers on an approximately picosecond timescale. These hot carriers relax after the removal of the applied voltage, generating a “second” emission in the measurement. This investigation provides an understanding of the carrier dynamics of terahertz emission and has an implication for the design of semiconductor terahertz emitters.
Hung, K. M.; Kuo, J.-Y.; Hong, C. C.; Sun, Greg; and Soref, R. A., "Carrier dynamics of terahertz emission based on strained SiGe/Si single quantum well" (2010). Physics Faculty Publications. 9.
American Institute of Physics
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