We propose the idea of making quantum dot lasers by embedding direct-band gap quantum dots in a short period superlattice whose band gap is indirect. This technique reduces the threshold current and its temperature dependence. We show that a higher characteristic-temperature T0 can be achieved in a quantum dot laser with indirect GaAs/AlAs superlattice barriers compared to that with direct GaAs barriers.
Sun, Greg; Soref, Richard A.; and Khurgin, Jacob B., "Reduced threshold current of a quantum dot laser in a short period superlattice of indirect-band gap" (2004). Physics Faculty Publications. 23.
American Institute of Physics
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