We report electrical measurements on an n-type Si1−xGex/Si/Si1−xGex double-barrier structure grown on a partially relaxed Si1−yGey buffer layer. Resonance tunneling of Δ4band electrons is demonstrated. This is attributed to the strain splitting in the SiGe buffer layer where the Δ4 band is lowest in energy at the electrode. Since the Δ4 band electrons have a much lighter effective mass along the direction of tunneling current in comparison with that of the Δ2 band electrons, this work presents an advantage over those SiGe resonant-tunneling diodes in which tunneling of Δ2 band electrons is employed.
Hung, K. M.; Cheng, T. H.; Huang, W. P.; Wang, K. Y.; Cheng, H. H.; Sun, Greg; and Soref, R. A., "Electron tunneling in a strained n-type Si1−xGex/Si/Si1−xGex double-barrier structure" (2008). Physics Faculty Publications. 17.
American Institute of Physics
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