Document Type
Article
Publication Date
9-26-2008
Abstract
We report electrical measurements on an n-type Si1−xGex/Si/Si1−xGex double-barrier structure grown on a partially relaxed Si1−yGey buffer layer. Resonance tunneling of Δ4band electrons is demonstrated. This is attributed to the strain splitting in the SiGe buffer layer where the Δ4 band is lowest in energy at the electrode. Since the Δ4 band electrons have a much lighter effective mass along the direction of tunneling current in comparison with that of the Δ2 band electrons, this work presents an advantage over those SiGe resonant-tunneling diodes in which tunneling of Δ2 band electrons is employed.
Recommended Citation
Hung, K. M.; Cheng, T. H.; Huang, W. P.; Wang, K. Y.; Cheng, H. H.; Sun, Greg; and Soref, R. A., "Electron tunneling in a strained n-type Si1−xGex/Si/Si1−xGex double-barrier structure" (2008). Physics Faculty Publications. 17.
https://scholarworks.umb.edu/physics_faculty_pubs/17
Publisher
American Institute of Physics
Rights
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Comments
The following article appeared in Applied Physics Letters, vol. 93, issue 12 (2008) and may be found at http://dx.doi.org/10.1063/1.2991295.
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.